? semiconductor components industries, llc, 2014 january, 2014 ? rev. 3 1 publication order number: bc846bm3/d bc846bm3t5g, NSVBC846BM3T5G general purpose transistor npn silicon ? moisture sensitivity level: 1 ? esd rating: human body model: >4000 v machine model: >400 v ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? this is a pb ? free device maximum ratings rating symbol value unit collector ? emitter voltage v ceo 65 vdc collector ? base voltage v cbo 80 vdc emitter ? base voltage v ebo 6.0 vdc collector current ? continuous i c 100 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 265 2.1 mw mw/ c thermal resistance, junction to ambient (note 1) r ja 470 c/w total device dissipation alumina substrate (note 2) t a = 25 c derate above 25 c p d 640 5.1 mw mw/ c thermal resistance, junction to ambient (note 2) r ja 195 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. device package shipping ? ordering information sot ? 723 case 631aa style 1 marking diagram collector 3 1 base 2 emitter bc846bm3t5g sot ? 723 (pb ? free) 8000 / tape & reel http://onsemi.com 1b = specific device code m = date code 1b m ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 3 2 1 NSVBC846BM3T5G sot ? 723 (pb ? free) 8000 / tape & reel
bc846bm3t5g, NSVBC846BM3T5G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage (i c = 10 ma) v (br)ceo 65 ? ? v collector ? emitter breakdown voltage (i c = 10 a, v eb = 0) v (br)ces 80 ? ? v collector ? base breakdown voltage (i c = 10 a) v (br)cbo 80 ? ? v emitter ? base breakdown voltage (i e = 1.0 a) v (br)ebo 6.0 ? ? v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo ? ? ? ? 15 5.0 na a on characteristics dc current gain (i c = 10 a, v ce = 5.0 v) (i c = 2.0 ma, v ce = 5.0 v) h fe ? 200 150 290 ? 450 ? collector ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) collector ? emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) ? ? ? ? 0.25 0.6 v base ? emitter saturation voltage (i c = 10 ma, i b = 0.5 ma) base ? emitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) ? ? 0.7 0.9 ? ? v base ? emitter voltage (i c = 1.0 ma, v ce = 5.0 v) base ? emitter voltage (i c = 2.0 ma, v ce = 5.0 v) base ? emitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 550 580 ? 645 660 ? 700 700 770 mv small ? signal characteristics current ? gain ? bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo ? ? 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) nf ? ? 10 db product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
bc846bm3t5g, NSVBC846BM3T5G http://onsemi.com 3 typical characteristics figure 1. dc current gain figure 2. collector ? emitter saturation voltage i c , collector current (ma) i c , collector current (ma) 1,000 100 10 1 0.1 10 100 1,000 100 10 1 0.1 0 0.1 0.2 0.3 0.4 figure 3. base ? emitter saturation voltage figure 4. base ? emitter ?on? voltage i c , collector current (ma) i c , collector current (ma) 1,000 100 10 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1,000 100 10 1 0.1 0 0.4 0.2 0.8 1.0 1.2 figure 5. base ? emitter temperature coefficient figure 6. collector saturation region i c , collector current (ma) i b , base current (ma) 1,000 100 10 1 0.1 ? 3.0 ? 2.6 ? 2.2 ? 1.8 ? 1.4 ? 1.0 ? 0.6 ? 0.2 100 10 1 0.1 0.01 0 0.4 0.8 1.2 1.6 2.0 h fe , dc current v ce(sat) , coll ? emit saturation voltage (v) v be(sat) , base ? emit saturation voltage (v) v be(on) , base ? emitter on voltage (v) vb , temperature coefficient (mv) v ce , collector ? emitter voltage (v) v ce = 5 v 150 c 25 c ? 55 c 150 c 25 c ? 55 c ic/ib = 20 ic/ib = 20 150 c 25 c ? 55 c 0.6 v ce = 5 v 150 c 25 c ? 55 c v ce = 5 v ? 55 c to 150 c vb , for v be t a = 25 c i c = 200 ma 100 ma 50 ma 20 ma 10 ma
bc846bm3t5g, NSVBC846BM3T5G http://onsemi.com 4 typical characteristics figure 7. capacitances figure 8. current ? gain ? bandwidth product v r , reverse voltage (v) i c , collector current (ma) 100 10 1 0.1 0.1 1 10 100 10 1 10 100 1,000 c, capacitance (pf) f t , current ? gain ? bandwidth product (mhz) cib cob v ce = 5 v
bc846bm3t5g, NSVBC846BM3T5G http://onsemi.com 5 package dimensions sot ? 723 case 631aa issue d dim min nom max millimeters a 0.45 0.50 0.55 b 0.15 0.21 0.27 b1 0.25 0.31 0.37 c 0.07 0.12 0.17 d 1.15 1.20 1.25 e 0.75 0.80 0.85 e 0.40 bsc h 1.15 1.20 1.25 l e notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions or gate burrs. d b1 e b e a l c h ? y ? ? x ? x 0.08 y 2x e 1 2 3 style 1: pin 1. base 2. emitter 3. collector *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* l2 0.15 0.20 0.25 0.29 ref 3x l2 3x 1 2x top view bottom view side view recommended dimensions: millimeters 0.40 1.50 2x package outline 0.27 2x 0.52 3x 0.36 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bc846bm3/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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